Band-Bending of Ga-Polar GaN Interfaced with Al2O3 through Ultraviolet/Ozone Treatment

作者: Kwangeun Kim , Jae Ha Ryu , Jisoo Kim , Sang June Cho , Dong Liu

DOI: 10.1021/ACSAMI.7B01549

关键词: OptoelectronicsSurface statesDipoleElectronic band structureOzoneSurface energyBand bendingUltravioletDielectricMaterials science

摘要: Understanding the band bending at the interface of GaN/… of the GaN surface on the energy band bending of atomic-layer-… be used to effectively vary the band bending, the valence band …

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