Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride
作者： Jialing Yang , Brianna S. Eller , Chiyu Zhu , Chris England , Robert J. Nemanich
DOI: 10.1063/1.4749268
关键词:
摘要: Al2O3 films, HfO2 and HfO2/Al2O3 stacked structures were deposited on n-type, Ga-face, GaN wafers using plasma-enhanced atomic layer deposition (PEALD). The first treated with a wet-chemical clean to remove organics an in-situ combined H2/N2 plasma at 650 °C residual carbon contamination, resulting in clean, oxygen-terminated surface. This cleaning process produced slightly upward band bending of 0.1 eV. Additional annealing after increased the by 0.2 eV. After initial high-k oxide films oxygen PEALD 140 °C. valence conduction offsets (VBOs CBOs) Al2O3/GaN HfO2/GaN deduced from x-ray ultraviolet photoemission spectroscopy (XPS UPS). determined be 1.8 1.4 eV, while 1.3 1.0 eV, respectively. These values are compared theoretical calculations b...
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