Band alignment between GaN and ZrO2 formed by atomic layer deposition

作者: Gang Ye , Hong Wang , Subramaniam Arulkumaran , Geok Ing Ng , Yang Li

DOI: 10.1063/1.4890470

关键词:

摘要: The band alignment between Ga-face GaN and atomic-layer-deposited ZrO 2 was investigated using X-ray photoelectron spectroscopy (XPS). The dependence of Ga 3d and Zr 3d core-…

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