ALD Al2O3 passivated MBE-grown AlGaN/GaN HEMTs on 6H-SiC
作者： D.H. Kim , V. Kumar , G. Chen , A.M. Dabiran , A.M. Wowchak
DOI: 10.1049/EL:20073550
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摘要: … the DC-to-RF dispersion in the HEMTs. The dynamic pulsed I–V … 2a and b show pulsed I–V measurements for unpassivated … AlGaN/GaN HEMTs before and after ALD Al2O3 passivation …
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