Performance enhancement of GaN high electron-mobility transistors with atomic layer deposition Al 2 O 3 passivation
作者： Dong Xu , Kanin Chu , J. Diaz , Wenhua Zhu , R. Roy
关键词: Wafer 、 High electron 、 Transistor 、 Atomic layer deposition 、 Optoelectronics 、 Wide-bandgap semiconductor 、 Electronic engineering 、 High-electron-mobility transistor 、 Performance enhancement 、 Passivation 、 Materials science
摘要: We report a new passivation technology based on atomic layer deposition (ALD) aluminum oxide for the GaN high electron-mobility transistor (HEMT). This process markedly enhances device's electrical performance including DC, and in particular pulsed-IV characteristics. The achieved improvement is attributed to outstanding interface between III-N ALD resulting from unique of growth, featuring wet-chemical-based wafer preparation as well self-cleaning at very beginning whole growth process.
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