Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n–GaN
作者： V. Kumar , L. Zhou , D. Selvanathan , I. Adesida
DOI: 10.1063/1.1491584
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摘要: A metallization scheme consisting of Ti/Al/Mo/Au with excellent edge acuity has been developed for obtaining low-resistance ohmic contacts to n–GaN. Excellent characteristics a specific contact resistivity as low 4.7×10−7 Ω-cm2 were obtained by rapid thermal annealing evaporated at 850 °C 30 sec in N2 ambient. Additionally, no degradation was observed these subjected long-term 500 °C 360 h.
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