Interface Formation and Electrical Transport in SnO2:Eu3+/GaAs Heterojunction Deposited by Sol-Gel Dip-Coating and Resistive Evaporation
作者： Tatiane F Pineiz , Luis VA Scalvi , Margarida J Saeki , Evandro A De Morais , None
DOI: 10.1007/S11664-010-1161-0
关键词:
摘要: The natural n-type conduction of tin dioxide (SnO2) may be compensated by trivalent rare-earth doping. In this work, SnO2 thin films doped with Eu3+ have been deposited the sol–gel dip-coating (SGDC) process, topped a GaAs layer resistive evaporation technique. goal is combination very efficient emitting matrix high-mobility semiconductor. x-ray diffraction pattern SnO2:Eu/GaAs heterojunctions showed simultaneously crystallographic plane characteristics as well cassiterite structure. electric resistance heterojunction device much lower than SnO2:2 at.%Eu and considered separately. Micrographs obtained scanning electron microscopy (SEM) cross-section that interface clearly identified, exhibiting good adherence uniformity. A possible explanation for low resistivity at.%Eu/GaAs formation small channels two-dimensional gas (2DEG) behavior.
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