Drude's model calculation rule on electrical transport in Sb-doped SnO2 thin films, deposited via sol–gel

摘要: Abstract The evaluation of free carrier concentration based on Drude's theory can be performed by the use optical transmittance in range 800–2000 nm (near infrared) for Sb-doped SnO 2 thin films. In this article, we estimate these films, which are deposited via sol–gel dip-coating. At approximately 900 nm, there is a separation among curves doped and undoped samples. plasma resonance phenomena approach leads to about 5×10 20  cm −3 . increase Sb increases film conductivity; however, magnitude measured resistivity still very high. only way combine such high with rather low conductivity have mobility. It becomes possible when crystallite dimensions taken into account. We obtain grains 5 nm average size estimating grain from X-ray diffraction data, using line broadening pattern. due intense scattering at boundary, created presence large amount nanoscopic crystallites. Such result accordance photoemission spectroscopy data that pointed incorporation proportional electron concentration, evaluated according model.