Reflectance modeling of electrochemically P-type porosified silicon by Drude–Lorentz model

摘要: Abstract Porous silicon remains a promising material for optoelectronic application; in this field monitoring of the refractive index profile porous layer is required. We present work procedure based on Drude–Lorentz model calculating optical parameters such as high- and low-frequency dielectric constants, plasma frequency by fitting reflectance spectra. The experimental data different created above bulk electrochemical etching are extracted from measurements. spectra recorded spectral range 350–2500 nm. First, our computational has been validated its application mono-crystalline determination parameters. A good agreement between results those found other works achieved visible-NIR range. In second step, was applied to (PS) layers. Useful like extinction coefficient, respectively, n (λ) κ(λ), band gap Eg, fabricated determined simulated correlation properties conditions treatment observed analyzed. main conclusion that reflected light surface, although non-homogeneous thus possessing scattering, essentially smaller than crystalline silicon. These show surface can act an antireflection coating could be used, particular, solar cells.