Optical properties of porous silicon thin films

摘要: Abstract Spectroellipsometrical (SE) investigations in 1.5–4.0 eV spectral range were done for optical characterization of porous silicon (PS) thin films. A mixing a crystalline and amorphous with voids using Effective Medium Approximation [D.E. Aspnes, Phys. Rev. B 27 (1983) 985] is used to calculated the refraction index (n) absorption constant (k) PS layers. Measurements on obtained electrochemically p+ substrates. From dispersion spectra refractive index, Wemple DiDomenico model [S.H. Wemple, M. Jr., 3 (1971) 41338], values band gap, energy oscillator (model’s parameters introduced by Wemple) are evaluated.