Determination of the refractive index of n+- and p-type porous Si samples

摘要: Abstract Photochemical etching of porous Si layers has been shown to be able create micrometer or submicrometer-scale lateral gratings very promising for photonic applications. However, the reduced size this periodicity hinders standard measurements refractive index variations. Therefore accurate characterizations such are usually difficult. In paper we address problem by reproducing on a larger scale (millimeter) light-induced variations associated periodicity. Using procedure perform X-ray and optical reflectivity our samples. One can then proceed determination porosity index. We present results p -type samples, where photo-dissolution only realized after formation layer, as well n + light action effective during layer.