Light assisted formation of porous silicon investigated by X-ray diffraction and reflectivity

摘要: X-ray diffraction and reflectivity measurements have been used to study the effect of light during chemical etching formation porous silicon (PS). A general statement is that illumination leads an increase both porosity lattice mismatch layer, which attributed smaller crystallites. For assisted using standard current density value, a second regime appears for large power. In this modifications induced by do not take place in bulk PS but at propagation front.