Porous Silicon Morphology: Photo-Electrochemically Etched by Different Laser Wavelengths
作者： Shereen M Faraj , Shaimaa M Abd Al-Baqi , Nasreen R Jber , Johnny Fisher , None
DOI: 10.1115/1.4030768
关键词:
摘要: Porous silicon (PS) has become the focus of attention in upgrading for optoelectronics. In this work, various structures were produced depending on formation parameters by photo-electrochemical etching (PECE) process n- and p-type wafer at different time durations (5–90 mins) current densities (5, 15, 20 mA/cm2) each set durations. Diode lasers 405 nm, 473 532 nm wavelengths, 50 mW power, used to illuminate surface samples during process. The results showed that controlled porous layers achieved using blue laser, giving uniform structure which can make it possible dispense with expensive methods patterning silicon.
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