Anisotropic strain effects on the photoluminescence emission from heteroepitaxial and homoepitaxial nonpolar (Zn,Mg)O/ZnO quantum wells
作者： J.-M. Chauveau , M. Teisseire , H. Kim-Chauveau , C. Morhain , C. Deparis
DOI: 10.1063/1.3578636
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摘要: We report on the properties of nonpolar a-plane (Zn,Mg)O/ZnO quantum wells (QW) grown by molecular beam epitaxy r plane sapphire and a ZnO substrates. For QWs sapphire, anisotropy lattice parameters (Zn,Mg)O barrier gives rise to an unusual in-plane strain state in QWs, which induces strong blue-shift excitonic transitions, addition confinement effects. observe this photoluminescence excitation experiments. The energies are satisfactorily simulated when taking into account variation exciton binding energy with QW width residual anisotropic strain. Then we compare homoepitaxial bulk substrate heteroepitaxial sapphire. show that reduction structural defects improvement surface morphology correlated enhancement properties: reduction...
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