Stacking fault related 3.31 − eV luminescence at 130 − meV acceptors in zinc oxide

摘要: Bulk ZnO samples, epitaxially grown layers, and nanostructures frequently exhibit a characteristic emission band at $3.31\text{\ensuremath{-}}\mathrm{eV}$ photon energy whose origin is controversially discussed in the literature. Partly, this omnipresent ascribed to $(e,{A}^{0})$ transitions of conduction electrons acceptors, which are abundant relatively high concentrations but have not positively been identified. The is, particular, often reported after intentional $p$-type doping ZnO, preferentially with group V species. In present work, we study by low-temperature cathodoluminescence (CL) spatial resolution, scanning electron microscopy, transmission microscopy (TEM). Line shape analyses different temperatures give clear evidence that originates from an transition where acceptor binding $(130\ifmmode\pm\else\textpm\fi{}3)\phantom{\rule{0.3em}{0ex}}\mathrm{meV}$. luminescence exclusively emitted distinct lines on sample surfaces cross sections representing intersections basal planes wurtzite hexagons. Correlating monochromatic CL images TEM images, conclude localized states causing located plane stacking faults.