Chapter Eight – Point Defects in ZnO
作者： Matthew D. McCluskey
DOI: 10.1016/BS.SEMSEM.2014.11.002
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摘要: Abstract Zinc oxide (ZnO) has promising properties for a range of optoelectronic applications, including efficient light emission and spintronics. Fundamental knowledge about dopants defects in ZnO expanded considerably over the past 15 years. In this chapter, point material are reviewed. An emphasis is placed on insights obtained through experimental techniques such as electron paramagnetic resonance, infrared spectroscopy, photoluminescence (PL), positron annihilation. Substitutional donors hydrogen shallow, with binding energies ~ 50 meV, contribute to prevailing n-type conductivity samples. Acceptor dopants, contrast, deep. nitrogen, example, an acceptor energy 1.4–1.5 eV. The oxygen (zinc) vacancy deep double donor (acceptor), but level values not known accurately. While there intriguing hints shallow acceptors from PL spectra, p-type doping remains elusive goal.
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