作者: E. V. Lavrov , F. Herklotz , J. Weber
DOI: 10.1103/PHYSREVB.79.165210
关键词:
摘要: A combined study of Raman scattering, IR absorption, photoluminescence, and photoconductivity was performed in ZnO. Two shallow donors---hydrogen at the bond-centered lattice site, ${\text{H}}_{\text{BC}}$, hydrogen bound an oxygen vacancy, ${\text{H}}_{\text{O}}$---were identified. Donor ${\text{H}}_{\text{BC}}$ has ionization energy 53 meV. The recombination exciton to gives rise $3360.1\ifmmode\pm\else\textpm\fi{}0.2\text{ }\text{meV}$ photoluminescence line. $1s\ensuremath{\rightarrow}2p$ donor transition $330\text{ }{\text{cm}}^{\ensuremath{-}1}$ is detected scattering spectra. stretch mode associated O-H bond absorption $3611\text{ with effective charge $(0.28\ifmmode\pm\else\textpm\fi{}0.03)e$. concentration determined from frequency shift ${E}_{1}(\text{LO})$ phonon-plasmon $591\text{ }{\text{cm}}^{\ensuremath{-}1}$. ${\text{H}}_{\text{O}}$ ZnO [A. Janotti C. G. Van de Walle, Nat. Mater. 6, 44 (2007)] 47 excitonic leads previously labeled ${I}_{4}$ line 3362.8 Photoconductivity spectra reveal $265\text{