作者: Daniel Meljanac , Krunoslav Juraić , Vilko Mandić , Hrvoje Skenderović , Sigrid Bernstorff
DOI: 10.1016/J.SURFCOAT.2017.04.072
关键词:
摘要: Abstract Thin Al-doped ZnO (AZO) films were deposited by magnetron sputtering on a non-heated quartz substrate. As-deposited samples have nanocrystalline structure, high transparency in the visible part of spectrum, but relatively low conductivity. After deposition, isochronally annealed for one hour hydrogen atmosphere at 200, 300 or 400 °C. The influence such treatment structural properties was analysed GIXRD and correlated with UV–Vis, photoluminescence impedance measurements. investigation demonstrated that heat reduces strain material, volume crystal lattice decreases size grows. By measuring optical it shown heating increases gap gradually number point defects, mostly related to interstitial atoms. As result this process, conductivity room temperature increased > 9 orders magnitude due an enhancement mobility concentration free carriers. activation energy defect annihilation estimated be about 1 eV corresponds diffusion atoms vacancies. carriers dopants act as shallow donors.