Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method
作者： W. Chebil , A. Fouzri , A. Fargi , B. Azeza , Z. Zaaboub
DOI: 10.1016/J.MATERRESBULL.2015.06.003
关键词: Optoelectronics 、 Porous silicon 、 Spin coating 、 Wurtzite crystal structure 、 Layer (electronics) 、 Silicon 、 Heterojunction 、 Thin film 、 Crystalline silicon 、 Materials science
摘要: Highlights: • High quality ZnO thin films grown on different p-Si substrates were successful obtained by sol–gel process. PL measurement revealed that film porous Si has the better optical quality. I–V characteristics for all heterojunctions exhibit diode formation. The ZnO/PSi shows a photovoltaic effect under illumination with maximum {sub Voc} of 0.2 V. - Abstract: In this study, are deposited technique p-type crystalline silicon (Si) [100] orientation, etched and silicon. structural analyses showed polycrystalline hexagonal wurtzite structure preferentially oriented along c-axis direction. Morphological study presence rounded facetted grains irregularly distributed surface samples. spectra at room temperature strong UV emission low defects in visible region comparing plat surface. heterojunction parameters evaluated from (I–V) dark temperature. ideality factor, barrier height series resistance determinedmore » using methods. Best electrical properties layer silicon.« less
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