Light-Harvesting in n-ZnO/p-Silicon Heterojunctions
作者： L. Li , C. X. Shan , B. H. Li , B. Yao , D. Z. Shen
DOI: 10.1007/S11664-010-1363-5
关键词:
摘要: Zinc oxide (ZnO) films were deposited onto Si to form n-ZnO/p-Si heterojunctions. Under the illumination of by both ultraviolet (UV) light and sunlight, obvious photovoltaic behavior was observed. It found that conversion efficiency heterojunctions increased significantly with increasing thickness ZnO film, mechanism for light-harvesting in is discussed. The results suggest may be helpful harvesting UV photons, thus decreasing thermalization loss energy Si-based solar cells.
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