A facile growth of spray based ZnO films and device performance investigation for Schottky diodes: Determination of interface state density distribution
作者： Şakir Aydoğan , Maria Luisa Grilli , Mehmet Yilmaz , Zakir Çaldiran , Hatice Kaçuş
DOI: 10.1016/J.JALLCOM.2017.02.198
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摘要: Abstract This paper reports on the study of ZnO films grown by chemical spray pyrolysis glass and Si substrates at temperatures 300, 350 400 °C performances corresponding Au/n-ZnO Schottky diodes. XRD measurements have shown that all are in single phase a wurtzite crystal structure. Microstructural properties such as lattice constants ( = b ≠ c ), unit cell volume, texture, dislocation density, standard deviation been determined. The size microstrain also calculated taking X-ray line broadening profile into account. Besides, optical features investigated UV–Vis measurements. band gap was found dependent temperature substrate during film growth decreased from 3.28 to 3.24 eV case 300 400 °C, respectively. Electrical characterizations barrier diodes using current-voltage (I-V) capacitance-voltage (C-V) Results show ideality factor firstly increased for 350 °C, then 400 °C. Also, height with increase temperature. behaviour has attributed inhomogeneous nature height, variation interface states formation new surface.
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