A p-n homojunction ZnO nanorod light-emitting diode formed by As ion implantation
作者： Y. Yang , X. W. Sun , B. K. Tay , G. F. You , S. T. Tan
DOI: 10.1063/1.3054639
关键词:
摘要: We report stable and repeatable UV red electroluminescence (EL) from ZnO nanorod (NR) array light-emitting diodes (LEDs), where the p-type was formed by As+ ion implantation into as-grown NRs. Both doped undoped single NRs were probed using nanomanipulator, former ones showed good rectification characteristics, confirming formation of p-n homojunctions implantation. Distinct EL emissions in regions observed at room temperature under forward bias, emission intensity shows amplified spontaneous suggesting high efficiency these LEDs.
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