Manufacturing and electrical characterization of Al-doped ZnO-coated silicon nanowires
作者： Ahmet Kaya , K. Gurkan Polat , Ahmed S. Mayet , Howard Mao , Şemsettin Altındal
DOI: 10.1016/J.MSSP.2017.10.022
关键词:
摘要: Abstract The p-type Si nanowires were synthesized via deep reactive ion etching (DRIE). Al-doped ZnO films coated on a p-Si substrate using the sol-gel method. ZnO/p-Si NWs characterized current-voltage (I-V) and capacitance-voltage (C-V) measurements in dark under illumination at room temperature. Electrical parameters such as series resistance (Rs), ideality factor (n), barrier height (ΦB) doping concentration atoms (NA) investigated electrical values Overall, I-V C-V plots of close to what was predicted had excellent performance. fabricated are more sensitive light frequency, so they promising candidate be used photovoltaic devices photo-capacitors.
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