作者: W. Chebil , M.A. Boukadhaba , A. Fouzri
DOI: 10.1016/J.SPMI.2016.04.033
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摘要: Abstract ZnO thin films grown on Quartz substrates using sol–gel method were synthesized and annealing at different temperature (700 °C, 900 °C 1000 °C). The structural, optical morphological comparison of layers elaborated with that obtained by the sophisticated expensive technique MOCVD demonstrates success epitaxial growth quartz substrate sol-gel process. Sol-gel film deposited annealed 1000 °C exhibit only (00l) XRD peak which is similar to diffraction patterns sapphire MOCVD. Surface morphology was examined SEM revealed grain size becomes larger faceted as increasing temperature. Pl emission a close similarity but weaker intensity.