作者: J. Hüpkes , B. Rech , O. Kluth , T. Repmann , B. Zwaygardt
DOI: 10.1016/J.SOLMAT.2006.06.027
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摘要: Abstract Highly conductive and transparent aluminum-doped zinc oxide (ZnO:Al) films were prepared by reactive mid-frequency (MF) magnetron sputtering at high growth rates. By varying the deposition pressure, pronounced differences with respect to film structure wet chemical etching behavior obtained. Optimized develop good light-scattering properties upon leading efficiencies when applied amorphous (a-Si:H) microcrystalline (μc-Si:H) silicon-based thin-film solar cells modules. Initial of 7.5% for a μc-Si:H single junction 9.7% an a-Si:H/μc-Si:H tandem module achieved on aperture area 64 cm 2 .