Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface
作者： Xinqiang Wang , Hiroyuki Iwaki , Masashi Murakami , Xiaolong Du , Yoshihiro Ishitani
DOI: 10.1143/JJAP.42.L99
关键词: Diffraction 、 Nitrogen 、 Layer (electronics) 、 Crystallography 、 Single domain 、 Nitriding 、 Optoelectronics 、 Sapphire 、 Full width at half maximum 、 Materials science 、 Molecular beam epitaxy
摘要: Nitridation of a (0001) sapphire substrate was used to eliminate the rotation domains and improve quality ZnO film grown by rf-plasma-assisted molecular beam epitaxy. It found that very thin nitrogen polar AlN layer, which formed nitridation, acted as template for following growth film, resulting in elimination were often observed case without nitridation. The full width at half maximum (002) (102) X-ray diffraction ω-scans decreased from 912 2870 arcsec 95 445 arcsec, respectively, due effect Based on this, its optical also improved.
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