Effects of GaN template on atomic‐layer‐epitaxy growth of ZnO
作者： K. Saito , K. Nagayama , Y. Hosokai , K. Ishida , K. Takahashi
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摘要: ZnO layer was epitaxially grown on GaN template by atomic epitaxy (ALE) using Diethylzinc (DEZ) and H2O at the growth temperature of 250 °C. By reflection high-energy electron diffraction (RHEED) measurements, spotty pattern observed for directly c-plane sapphire substrate, while streaky that template. Full-width half-maximum (FWHM) value (0002) X-ray rocking curve greatly reduced from 4.96° to 0.103° photoluminescence (PL) only near bandedge emissions were observed. FWHM neutral-donor-bound-exciton (D0X) emission line 18.7 16.1 meV (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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