作者: A. Ohtomo , M. Kawasaki , I. Ohkubo , H. Koinuma , T. Yasuda
DOI: 10.1063/1.124573
关键词:
摘要: ZnO/Mg0.2Zn0.8O superlattices with a band-gap offset of about 0.5 eV were epitaxially grown by laser molecular-beam epitaxy on sapphire(0001) substrate using ZnO buffer layer. The superlattice structure period ranging from 8 to 18 nm was clearly verified cross-sectional transmission electron microscopy, Auger depth profile, and x-ray diffraction. As the well layer thickness decreased below 5 nm, photoluminescence peak absorption edge in excitation spectra showed blueshift, indicating quantum-size effect.