Selective and nonselective wet etching of Zn 0.9 Mg 0.1 O/ZnO

摘要: Wet etch rates at 25°C for Zn0.9Mg0.1O grown on sapphire substrates by pulsed laser deposition (PLD) were in the range 300–1100 nm · min−1 with HCl/H2O (5×10−3−2×10−2 M) and 120–300 H3PO4/H2O M). Both of these dilute mixtures exhibited diffusion-limited etching, thermal activation energies 2–3 kCal mol−1. By sharp contrast, ZnO also PLD much slower similar solutions, 1.2–50 (0.01–1.2 12–54 (0.02–0.15 The etching was reaction limited over temperature 25–75°C, close to 6 resulting selectivity can be a high as ∼400 HCl ∼30 H3PO4.