Effects of deposition temperature on the crystallinity of Ga-doped ZnO thin films on glass substrates prepared by sputtering method
作者： Yu Jin Park , Hyuk Nyun Kim , Hyun Ho Shin
DOI: 10.1016/J.APSUSC.2009.04.022
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摘要: Abstract The microstructural characterization of Ga-doped (5 at.%) ZnO thin film was conducted by a transmission electron microscopy study. atomic arrangement having an wurtzite structure identified the experimental HRTEM and Fourier filtered images as well diffractions. As result, we have revealed that orientation defect density films were greatly influenced deposition temperature, resulting in variation electrical property. In other words, tendency forming c -axis oriented texture grows up defects such dislocations stacking faults decrease, temperature sputtering increases. Consequently, properties can be controlled directly related with density.
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V. Bhosle, A. Tiwari, J. Narayan, Metallic conductivity and metal-semiconductor transition in Ga-doped ZnO Applied Physics Letters. ,vol. 88, pp. 032106- ,(2006) , 10.1063/1.2165281
V. Bhosle, A. Tiwari, J. Narayan, Electrical properties of transparent and conducting Ga doped ZnO Journal of Applied Physics. ,vol. 100, pp. 033713- ,(2006) , 10.1063/1.2218466
Xuhu Yu, Jin Ma, Feng Ji, Yuheng Wang, Xijian Zhang, Chuanfu Cheng, Honglei Ma, Preparation and properties of ZnO:Ga films prepared by r.f. magnetron sputtering at low temperature Applied Surface Science. ,vol. 239, pp. 222- 226 ,(2005) , 10.1016/J.APSUSC.2004.05.266
D. Gerthsen, D. Litvinov, Th. Gruber, C. Kirchner, A. Waag, Origin and consequences of a high stacking fault density in epitaxial ZnO layers Applied Physics Letters. ,vol. 81, pp. 3972- 3974 ,(2002) , 10.1063/1.1523151
Xuhu Yu, Jin Ma, Feng Ji, Yuheng Wang, Chuanfu Cheng, Honglei Ma, Thickness dependence of properties of ZnO:Ga films deposited by rf magnetron sputtering Applied Surface Science. ,vol. 245, pp. 310- 315 ,(2005) , 10.1016/J.APSUSC.2004.10.022
Quan-Bao Ma, Zhi-Zhen Ye, Hai-Ping He, Jing-Rui Wang, Li-Ping Zhu, Bing-Hui Zhao, Preparation and characterization of transparent conductive ZnO:Ga films by DC reactive magnetron sputtering Materials Characterization. ,vol. 59, pp. 124- 128 ,(2008) , 10.1016/J.MATCHAR.2006.11.020
Takahiro Yamada, Aki Miyake, Seiichi Kishimoto, Hisao Makino, Naoki Yamamoto, Tetsuya Yamamoto, Effects of substrate temperature on crystallinity and electrical properties of Ga-doped ZnO films prepared on glass substrate by ion-plating method using DC arc discharge Surface & Coatings Technology. ,vol. 202, pp. 973- 976 ,(2007) , 10.1016/J.SURFCOAT.2007.05.051
David S. Ginley, Clark Bright, Transparent Conducting Oxides Mrs Bulletin. ,vol. 25, pp. 15- 18 ,(2000) , 10.1557/MRS2000.256
HP Sun, XQ Pan, XL Du, ZX Mei, ZQ Zeng, QK Xue, None, Microstructure and crystal defects in epitaxial ZnO film grown on Ga modified (0001) sapphire surface Applied Physics Letters. ,vol. 85, pp. 4385- 4387 ,(2004) , 10.1063/1.1811393
H. C. Park, D. Byun, B. Angadi, D. Hee Park, W. K. Choi, J. W. Choi, Y. S. Jung, Photoluminescence of Ga-doped ZnO film grown on c‐Al2O3 (0001) by plasma-assisted molecular beam epitaxy Journal of Applied Physics. ,vol. 102, pp. 073114- ,(2007) , 10.1063/1.2783956