Effective-Mass Theory of Electron States in Heterostructures and Quantum Wells
作者： U. Rössler , F. Malcher , A. Ziegler
DOI: 10.1007/978-1-4684-5553-3_17
关键词: Condensed matter physics 、 Impurity 、 Semiconductor 、 Electron 、 Physics 、 Quantum well 、 Effective mass (solid-state physics) 、 Heterojunction 、 Electronic band structure 、 Doping
摘要: For describing near band edge states of intrinsic (subbands) and extrinsic (impurity states) character in semiconductor structures effective-mass theory is as important bulk semiconductors. We 1) reconsider the concept this context, 2) demonstrate, how a self-consistent calculation subband modulation doped heterostructures implications structure doping profiles are considered, 3) suggest new for treating impurity problem.
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