作者: J. M. Luttinger , W. Kohn
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摘要: A new method of developing an "effective-mass" equation for electrons moving in a perturbed periodic structure is discussed. This particularly adapted to such problems as arise connection with impurity states and cyclotron resonance semiconductors Si Ge. The resulting theory generalizes the usual effective-mass treatment case where band minimum not at center Brillouin zone, also degenerate. latter striking, Wannier being replaced by set coupled differential equations.