Fundamentals of Low Dimensional Physics

摘要: In the last decade technological drive towards smaller microelectronic devices has given rise to concept of low-dimensional physics in two distinct contexts. The earlier referred low meaning less than three, and properties two-dimensional electron systems (as inversion layer Si MOSFETs or at modulation doped GaAs/AlxGa1−xAs heterojunction) is now a mature, even aging, subject. More recently, come small, as microstructures, where feature size sample small compared with intrinsic length scales under investigation (e.g. mean-free path electrons inter-electron separation). this introductory set lectures, some basic pertaining both meanings will be described, tutorial emphasis. Many following speakers take up contemporary points interest, expand appropriate on ideas expressed here. overview fabrication technologies covers preparation samples that we investigate.