Surface and Interface Properties and the Quantum Hall Effect

作者: Karlheinz Seeger

DOI: 10.1007/978-3-662-09855-4_14

关键词: CrystalFilling factorThermal Hall effectQuantum Hall effectSemiconductorCondensed matter physicsLandau quantizationMaterials scienceQuantum wireSurface (mathematics)

摘要: So far we have dealt with the bulk properties of semiconductors and tacitly assumed that crystal is extended infinitely. We will now briefly discuss influence surface interfaces between on transport semiconductors.

参考文章(105)
Marius Grundmann, Theory of Quantum Dot Lasers Springer Berlin Heidelberg. pp. 299- 316 ,(2002) , 10.1007/978-3-642-56149-8_12
D Bimberg, M Grundmann, D, NN Ledentsov, Quantum dot heterostructures ,(1999)
Marius Grundmann, Nano-Optoelectronics : concepts, physics and devices Springer-Verlag. ,(2002)
H. van Houten, C.W.J. Beenakker, B.J. van Wees, Chapter 2: Quantum Point Contacts Semiconductors and Semimetals. ,vol. 35, pp. 9- 112 ,(1992) , 10.1016/S0080-8784(08)62392-3
S. Ferrara, P. Gatto, A. F. Grilla, Conformal algebra in space-time and operator product expansion ,(1973)
Fernando Flores, Federico Garcia-Moliner, Introduction to the theory of solid surfaces ,(1979)
R. B. Laughlin, Quantized Hall conductivity in two dimensions Physical Review B. ,vol. 23, pp. 5632- 5633 ,(1981) , 10.1103/PHYSREVB.23.5632