Effects of Organic and Inorganic Dielectric Films on Semiconductor Devices

摘要: Departure of semiconductor-device performance from that expected on the basis first-order models is often attributed to surface effects. One effect, channel conduction, considered in terms its relation electrical charge behavior organic or inorganic dielectric films semiconductor surfaces. Two cases device failure due instabilities and layers are presented. In one, sodium ions drift silicon oxide induce a p-wall isolation region. Sodium can be sealed outside oxide, thus preventing failure, by using nitride as an ion barrier. A second example dielectric-related involves plastic-encapsulated device. this case, burn-in testing induces migration negative charges at plastic-inorganic interface over n-type The latter inverted p type. resulting leakage current exceeds allowable limits results.