A bibliography of metal-insulator-semiconductor studies

作者: E.S. Schlegel

DOI: 10.1109/T-ED.1967.16101

关键词: Electrical engineeringFabricationMaterials scienceBibliographyInsulator (electricity)Hybrid silicon laserTransistorSilicon nitrideSemiconductorSiliconEngineering physics

摘要: A bibliography of more than 550 papers in the field metal-insulator-semiconductor theory and technology provides a catalog published work so that investigators can easily relate their to reported by others. In most papers, insulator layer discussed is SiO 2 or silicon nitride, semiconductor silicon. The information has been arranged according following major classifications: MOS transistor behavior physics preparation oxide layers techniques for evaluating related from glass device fabrication radiation effects alternative materials.

参考文章(355)
R.R. Giroux, H.L. Hughes, SPACE RADIATION AFFECTS MOS FET'S Electronics (U.S.). ,(1964)
E. Kooi, The Surface Charge in Oxidized Silicon The Surface Properties of Oxidized Silicon. pp. 114- 132 ,(1967) , 10.1007/978-3-662-40210-8_7
K.H. Zaininger, A.G. Holmes-Siedle, SURVEY OF RADIATION EFFECTS IN METAL--INSULATOR--SEMICONDUCTOR DEVICES. RCA Rev., 28: 208-40(June 1967).. ,(1967)
F. Wanlass, C. Sah, Nanowatt logic using field-effect metal-oxide semiconductor triodes international solid-state circuits conference. pp. 32- 33 ,(1963) , 10.1109/ISSCC.1963.1157450
Peter V. Gray, Dale M. Brown, DENSITY OF SiO2–Si INTERFACE STATES Applied Physics Letters. ,vol. 8, pp. 31- 33 ,(1966) , 10.1063/1.1754468
Yoshio Nishi, Electron Spin Resonance in SiO2Grown on Silicon Japanese Journal of Applied Physics. ,vol. 5, pp. 333- 333 ,(1966) , 10.1143/JJAP.5.333
E. Kooi, M. V. Whelan, ON THE ROLE OF SODIUM AND HYDROGEN IN THE Si–SiO2 SYSTEM Applied Physics Letters. ,vol. 9, pp. 314- 317 ,(1966) , 10.1063/1.1754765