Chapter 4 MOS Transistors
作者： Marvin H. White
DOI: 10.1016/S0080-8784(08)63009-4
关键词: Semiconductor 、 Amplifier 、 Electronic circuit 、 Fabrication 、 General theory 、 Mathematical development 、 Optoelectronics 、 Capacitor 、 Materials science 、 Transistor 、 Nanotechnology
摘要: Publisher Summary This chapter discusses the metal–oxide–semiconductor (MOS) capacitor, transistor and their circuits. The theory of voltage-dependent MOS capacitor operating under various modes accumulation, depletion, or inversion semiconductor surface is described. It suggested that mathematical development general related to operation MOS- field-effect (FET) structure. Fabrication experimental determination C-V characteristics are discussed in terms a representative fabrication process. Then device evaluation n- p -channel MOS-FET for process presented. small-signal amplifier switching also discussed. application n enhancement-mode digital switching-type circuits
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