The transient response of insulated-gate field-effect transistors☆

摘要: Abstract The equations describing the current flow and charge distribution in insulated-gate field-effect transistors are developed. These include Ohm's law, continuity equation trapping when it is assumed that only one level dominant. boundary conditions at source, drain gate insulator-semiconductor surface also included. result a set of non-linear partial differential equations, whose solution obtained by numerical methods. important physical properties are: initial lifetime free carriers, carrier trap, density trap sites, ratio trapped carriers to sites mobility. geometrical device insulator thickness channel length. Solutions for various values these parameters given.