Low voltage performance of Pb(Zr,Ti)O3 capacitors through donor doping

摘要: We report low voltage (1.5–3 V) performance of ferroelectric Pb(Zr,Ti)O3 based capacitors. La substitution up to 10% was performed systematically lower the coercive and saturation voltages epitaxial capacitors grown on Si using a (Ti0.9Al0.1)N/Pt conducting barrier composite. Ferroelectric substituted with show significantly compared 0% 3% La. This is attributed systematic decrease in tetragonality (i.e., c/a ratio) phase. Furthermore, samples doped showed dramatically better retention pulse width dependent polarization These promise as storage elements power high density memory architectures.