作者: R. RAMESH , A. INAM , W. K. CHAN , B. WILKENS , K. MYERS
DOI: 10.1126/SCIENCE.252.5008.944
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摘要: Thin-film heterostructures of Bi4Ti3O12Bi2Sr2CuO6+x, have been grown on single crystals SrTiO3, LaAlO3, and MgAl2O4 by pulsed laser deposition. X-ray diffraction studies show the presence c-axis orientation only; Rutherford backscattering experiments composition to be close nominal stoichiometry. The films are ferroelectric exhibit a symmetric hysteresis loop. remanent polarization was 1.0 microcoulomb per square centimeter, coercive field 2.0 x 105 volts centimeter. Similar results were obtained with YBa2Cu3O7–x Bi2Sr2CaCu2O8+x, single-crystal Bi2Sr2CuO6+xas bottom electrodes. These look promising for use as novel, lattice-matched, epitaxial film/electrode in nonvolatile memory applications.