Ferroelectric field effect in epitaxial LaVO3/(Ba,Sr)/TiO3/(Pb,La)(Zr,Ti)O3/(La,Sr)CoO3 heterostructures
作者： Woong Choi , Tim Sands
DOI: 10.1063/1.1560876
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摘要: A ferroelectric field effect was demonstrated in epitaxial LaVO3/(Ba,Sr)TiO3/(Pb,La)(Zr,Ti)O3/(La,Sr)CoO3 semiconductor–ferroelectric–metal heterostructures grown on (001) SrTiO3 single crystal substrates by pulsed laser deposition. high degree of c-axis orientation and strong in-plane texture measured four-circle x-ray diffractometer confirmed the crystallographic relationships between layers. 30 nm interlayer (Ba,Sr)TiO3 required to prevent decomposition (Pb,La)(Zr,Ti)O3 during growth LaVO3 at 500 °C a vacuum. The capacitance–voltage measurement heterostructure exhibited decrease capacitance ∼20% positive voltages, which explained formation depletion region semiconducting LaVO3. observed revealed modulation channel resistance confirming estimated be ∼7 depth. On- off-state ratios up 2.5 were measured.
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