摘要: A variety of deposition techniques are employed for ferroelectric thin film capacitors to be used in memory devices. These include sputtering [382], MOCVD (Metal-Organic Chemical Vapour Deposition) [383], MOD (MetalOrganic Decomposition) [384], PLD (Pulsed Laser [385], solgel (solution—gelation) spin-on [386], and a mist which stoichiometrically correct submicron droplets sprayed into the chamber [387]. The flash process [388, 389, 390, 391, 392] precursor solutions delivered liquid form (due their low volatilities) then flashed vapour phase via incandescent lights or laser sources at shower head delivery point just below wafer. systems all differ from each other (Isobe’s achieves highest rate), have separate patents. What they share is ability handle viscous precursors with pressures. [The LG Semiconductor Corp. BST utilizes relatively barium- strontium-(THD)2-tetraglyme, together Ti(O-iso-Pr)(THD)2.] True CVD not used; that is, chloride hydride precursors, since halogen contamination problem. MBE (Molecular Beam Epitaxy) generally used, one two research exceptions [393]. And thick such as spray pyrolysis, slip-casting, etc., used.
springer.com
sci-hub.se 参考文章(62)
Narayan Solayappan, Gary F. Derbenwick, Larry D. Mcmillan, Carlos A. Paz De Araujo, Shinichiro Hayashi, Conformal LSMCD deposition of SrBi2(Ta1-xNbx)2O9 Integrated Ferroelectrics. ,vol. 14, pp. 237- 246 ,(1997) , 10.1080/10584589708019997
Cheol-Hoon Yang, Sang-Shik Park, Soon-Gil Yoon, Electrical properties of SrBi2Ta2O9 thin films deposited by RF magnetron sputtering Integrated Ferroelectrics. ,vol. 18, pp. 377- 387 ,(1997) , 10.1080/10584589708221714
Koji Watanabe, Masahiro Tanaka, Eiko Sumitomo, Kenji Katori, Hajime Yagi, J. F. Scott, Spin-coated ferroelectric SrBi2Nb2O9 thin films Applied Physics Letters. ,vol. 73, pp. 126- 128 ,(1998) , 10.1063/1.121705
C. D. Gutleben, Band alignments of the platinum/SrBi2Ta2O9 interface Applied Physics Letters. ,vol. 71, pp. 3444- 3446 ,(1997) , 10.1063/1.120402
Graham K. Hubler, Douglas B. Chrisey, Pulsed laser deposition of thin films Pulsed Laser Deposition of Thin Films. pp. 1675- 1689 ,(2003) , 10.1201/NOE0750309608-90
Kenji Iijima, Yoshihiro Tomita, Ryoichi Takayama, Ichiro Ueda, Preparation ofc‐axis oriented PbTiO3thin films and their crystallographic, dielectric, and pyroelectric properties Journal of Applied Physics. ,vol. 60, pp. 361- 367 ,(1986) , 10.1063/1.337654
Vadim G. Kessler, Liliane G. Hubert-Pfalzgraf, Stephane Daniele, Alain Gleizes, Single-source Precursors for BaTiO3: Synthesis and Characterization of .beta.-Diketonato Alkoxides and Molecular Structure of Ba2Ti2(thd)4(.mu.3-OEt)2(.mu.-OEt)4(OEt)2(EtOH)2 Chemistry of Materials. ,vol. 6, pp. 2336- 2342 ,(1994) , 10.1021/CM00048A020
Q. X. Jia, A. T. Findikoiglu, R. Zhou, S. R. Foltyn, X. D. Wu, J. L. Smith, Q. Wang, D. F. Evans, W. L. Gladfelter, Structural and dielectric properties of Ba0.5Sr0.5TiO3 thin films with an epi-RuO2 bottom electrode Integrated Ferroelectrics. ,vol. 19, pp. 111- 119 ,(1998) , 10.1080/10584589808012698
Tingkai Li, Yongfei Zhu, Seshu B. Desu, Chien‐Hsiung Peng, Masaya Nagata, Metalorganic chemical vapor deposition of ferroelectric SrBi2Ta2O9 thin films Applied Physics Letters. ,vol. 68, pp. 616- 618 ,(1996) , 10.1063/1.116486
Koichi Takemura, Toshiyuki Sakuma, Yoichi Miyasaka, High dielectric constant (Ba,Sr)TiO3 thin films prepared on RuO2/sapphire Applied Physics Letters. ,vol. 64, pp. 2967- 2969 ,(1994) , 10.1063/1.111396