Modal gain and lasing states in InAs/GaAs self-organized quantum dot lasers
作者： P. W. Fry , L. Harris , S. R. Parnell , J. J. Finley , A. D. Ashmore
DOI: 10.1063/1.371908
关键词: Optoelectronics 、 Quantum well 、 Laser 、 Semiconductor optical gain 、 Quantum dot laser 、 Photocurrent 、 Physics 、 Electro-absorption modulator 、 Optics 、 Lasing threshold 、 Semiconductor laser theory
摘要: The modal gain of an InAs/GaAs self-organized quantum dot laser is determined from a measurement the normal incidence, interband photocurrent. maximum ground state transition shown to have value (7±3) cm−1, considerably smaller than typical values for comparable well lasers. photocurrent technique demonstrated be convenient and simple method determining spectral form comparing different devices. consequences small characteristics are discussed.
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