High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm
作者： A Salhi , L Fortunato , L Martiradonna , M T Todaro , R Cingolani
DOI: 10.1088/0268-1242/22/4/017
关键词:
摘要: High performance 1300 nm lasers based on self-organized InAs/InGaAs quantum dots (QDs) are reported. By optimizing the QD growth parameters and decreasing waveguide thickness, a high modal gain low transparency current density of 32 cm−1 35 A cm−2, respectively, were obtained from device containing five stacked layers. The internal efficiency is as 90%.
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sci-hub.se 参考文章(12)
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