Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s−1 directly modulated lasers and 40 Gb s−1 signal-regenerative amplifiers
作者： M Sugawara , N Hatori , M Ishida , H Ebe , Y Arakawa
DOI: 10.1088/0022-3727/38/13/008
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摘要: This paper presents recent progress in the field of semiconductor lasers and optical amplifiers with InAs-based self-assembled quantum dots active region for telecommunication. Based on our design terms maximum bandwidth high-speed modulation p-type doping high temperature stability, we realized temperature-insensitive 10 Gb s−1 laser diodes a GaAs substrate at 1.3 µm. The output waveform maintained clear eye opening, average power extinction ratio without current adjustments from 20°C to 70°C. We developed ultrawide-band high-power 1.5 µm wavelength an InP substrate. amplifier showed ultrafast gain response under saturation, enabled signal regeneration 40 by suppressing '1'-level noise due beating between amplified spontaneous emission. present module polarization diversity enable stable polarization-insensitive performance, also, discuss prospects close stacking technique.
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sci-hub.se 参考文章(38)
Mitsuru Sugawara, Self-assembled InGaAs/GaAs, quantum dots Academic Press. ,(1999)
Kohki Mukai, Nobuyuki Ohtsuka, Mitsuru Sugawara, Susumu Yamazaki, Self-Formed $\bf In_{0.5}Ga_{0.5}As$ Quantum Dots on GaAs Substrates Emitting at $\bf 1.3\,{\mbi {\mu}}m$ Japanese Journal of Applied Physics. ,vol. 33, ,(1994) , 10.1143/JJAP.33.L1710
Kohki Mukai, Mitsuru Sugawara, Mitsuru Egawa, Nobuyuki Ohtsuka, Chapter 3 Metalorganic Vapor Phase Epitaxial Growth of Self-Assembled InGaAs/GaAs Quantum Dots Emitting at 1.3 μm Semiconductors and Semimetals. ,vol. 60, pp. 155- 181 ,(1999) , 10.1016/S0080-8784(08)62529-6
J.L. Webber, M.A. Beach, C.N. Canagarajah, Indoor 2 GHz polarisation and spatial fading characteristics Electronics Letters. ,vol. 38, pp. 1133- 1134 ,(2002) , 10.1049/EL:20020784
M Sugawara, T Akiyama, N Hatori, Y Nakata, H Ebe, H Ishikawa, Quantum-dot semiconductor optical amplifiers for high-bit-rate signal processing up to 160 Gb s -1 and a new scheme of 3R regenerators Measurement Science and Technology. ,vol. 13, pp. 1683- 1691 ,(2002) , 10.1088/0957-0233/13/11/304
Mitsuru Ishida, Nobuaki Hatori, Tomoyuki Akiyama, Koji Otsubo, Yoshiaki Nakata, Hiroji Ebe, Mitsuru Sugawara, Yasuhiko Arakawa, Photon lifetime dependence of modulation efficiency and K factor in 1.3μm self-assembled InAs∕GaAs quantum-dot lasers: Impact of capture time and maximum modal gain on modulation bandwidth Applied Physics Letters. ,vol. 85, pp. 4145- 4147 ,(2004) , 10.1063/1.1811789
D.G. Deppe, H. Huang, O.B. Shchekin, Modulation characteristics of quantum-dot lasers: the influence of p-type doping and the electronic density of states on obtaining high speed IEEE Journal of Quantum Electronics. ,vol. 38, pp. 1587- 1593 ,(2002) , 10.1109/JQE.2002.805246
A. Ponchet, A. Le Corre, H. L’Haridon, B. Lambert, S. Salaün, Relationship between self‐organization and size of InAs islands on InP(001) grown by gas‐source molecular beam epitaxy Applied Physics Letters. ,vol. 67, pp. 1850- 1852 ,(1995) , 10.1063/1.114353
S. Fathpour, Z. Mi, P. Bhattacharya, A. R. Kovsh, S. S. Mikhrin, I. L. Krestnikov, A. V. Kozhukhov, N. N. Ledentsov, The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers Applied Physics Letters. ,vol. 85, pp. 5164- 5166 ,(2004) , 10.1063/1.1829158
Takashi Kita, Osamu Wada, Hiroji Ebe, Yoshiaki Nakata, Mitsuru Sugawara, Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots Japanese Journal of Applied Physics. ,vol. 41, pp. 1143- ,(2002) , 10.1143/JJAP.41.L1143