Chapter 1 Band Structure and Galvanomagnetic Effects in III-V Compounds with Indirect Band Gaps

摘要: Publisher Summary This chapter discusses the band structure and galvanomagnetic effects in III-V compounds with indirect gaps. Attention will be fixed upon those which do not have their conduction-band minima located at k = 0. Instead, these minima, are ellipsoids of revolution momentum space, apparently along [100]-axes. These compounds, as well direct-gap appear to nearly same type valence structure. Theories relating for ellipsoidal symmetry warped maxima near spherical reviewed. The experimental data available gap presented emphasis on more recent results. Most evidence comes from theoretical optical studies. It is suggested that High carrier mobilities homogeneous single crystals high purity important experiments can give parameters directly, such cyclotron resonance magnetoresistance. Single indirect-gap generally difficult grow fewer impurities than possible most direct compounds.