Investigation of Isoelectronic Impurity Absorption in n-GaP

作者: Augustinas Galeckas , Vytautas Grivickas , Jan Linnros , Vitalijus Bikbajevas

DOI:

关键词: ExcitonPhononDirect and indirect band gapsMaterials scienceAbsorption (electromagnetic radiation)Brillouin zoneAbsorption spectroscopyMolecular physicsEmission spectrumDoping

摘要: The momentum conserving indirect excitonic transitions from the valence band maximum to conduction minima close X1 points in Brillouin zone have been investigated for moderately doped n-type GaP using a novel depthand time-resolved excess free-carrier-absorption (FCA) technique. Different singularities due band-to-band and absorption are observed near gap edge at 77 K. Observations clearly yield signatures sharp no-phonon lines of excitons bound neutral sulfur (S) isoelectronic nitrogen (N) impurities, their complexes phonon replicas. A parallel investigation also reveals emission exciton S N as well sidebands. characteristic energies obtained our experiments compared with those reported literature. Optical nonlinearity principle line is observed.

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