Absorption and Luminescence of Excitons at Neutral Donors in Gallium Phosphide
作者： P. J. Dean
关键词:
摘要: … This absorption component can be observed more … spectra of sulphurdoped gallium phosphide. It has similar origin to the line 2, observed in the absorption spectra of gallium phosphide …
harvard.edu
sci-hub.se 参考文章(24)
D. G. Thomas, M. Gershenzon, J. J. Hopfield, Bound Excitons in GaP Physical Review. ,vol. 131, pp. 2397- 2404 ,(1963) , 10.1103/PHYSREV.131.2397
P. J. Dean, D. G. Thomas, Intrinsic Absorption-Edge Spectrum of Gallium Phosphide Physical Review. ,vol. 150, pp. 690- 702 ,(1966) , 10.1103/PHYSREV.150.690
M.V. Hobden, J.P. Russell, The Raman spectrum of gallium phosphide Physics Letters. ,vol. 13, pp. 39- 41 ,(1964) , 10.1016/0031-9163(64)90299-9
P G Dawber, R J Elliott, Theory of Optical Absorption by Vibrations of Defects in Silicon Proceedings of the Physical Society. ,vol. 81, pp. 453- 460 ,(1963) , 10.1088/0370-1328/81/3/309
Robert W. Keyes, Trends in the Lattice ``Combination Bands'' of Zincblende‐type Semiconductors The Journal of Chemical Physics. ,vol. 37, pp. 72- 73 ,(1962) , 10.1063/1.1732977
S. S. Mitra, Phonon Assignments in ZnSe and GaSb and Some Regularities in the Phonon Frequencies of Zincblende-Type Semiconductors Physical Review. ,vol. 132, pp. 986- 991 ,(1963) , 10.1103/PHYSREV.132.986
W. G. Oldham, Vapor Growth of GaP on GaAs Substrates Journal of Applied Physics. ,vol. 36, pp. 2887- 2890 ,(1965) , 10.1063/1.1714600
D. G. Thomas, M. Gershenzon, F. A. Trumbore, Pair Spectra and "Edge" Emission in Gallium Phosphide Physical Review. ,vol. 133, pp. 269- 279 ,(1964) , 10.1103/PHYSREV.133.A269
D.G. Thomas, R.T. Lynch, Solution growth of nitrogen doped gallium phosphide crystals Journal of Physics and Chemistry of Solids. ,vol. 28, pp. 433- 437 ,(1966) , 10.1016/0022-3697(67)90310-1
Keiji Maeda, Temperature dependence of pair band luminescence in GaP Journal of Physics and Chemistry of Solids. ,vol. 26, pp. 595- 605 ,(1965) , 10.1016/0022-3697(65)90135-6