Solution growth of nitrogen doped gallium phosphide crystals

摘要: Abstract Crystals of GaP were grown by the slow cooling solutions in Ga. Nitrogen doped crystals (10 16 −10 19 atoms/cm 3 ) produced addition GaN. Results are presented for concentration nitrogen as a function solution. Unless special precautions taken, usually have residual between 10 17 and 18 . Two methods described eliminating this contamination. The is estimated from optical absorption measurements.