Low-temperature intermediate Au-Si wafer bonding; eutectic or silicide bond
DOI: 10.1016/S0924-4247(97)01550-1
关键词: Composite material 、 Silicide 、 Wafer bonding 、 Materials science 、 Metallurgy 、 Eutectic system 、 Thermocompression bonding 、 Anodic bonding 、 Diffusion barrier 、 Eutectic bonding 、 Barrier layer
摘要: … AuSi bond with a Ti adhesion layer involves the dissolving of the oxide layer by silicidation of the titanium layer and the subsequent direct Au-Si … than the Au-Si eutectic temperature. …
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